Wafer level photonic device die structure and method of making the same

A structure, comprising:

• a carrier substrate that includes a first contact pad and a second contact pad disposed over a first side of the carrier substrate and a third contact pad and a fourth contact pad disposed over a second side of the carrier substrate opposite the first side;
• a first epi-structure and a second epi-structure disposed over the carrier substrate, the first and second epi-structures eac including a first doped semiconductor layer, a second doped semiconductor layer having a different type of conductivity from the first doped semiconductor layer, and a light-emitting layer disposed between the first and second doped semiconductor layers respectively;
• a first metal element disposed between, and electrically coupling together, the first contact pad and the second doped semiconductor layer of the first epi-structure;
• a second metal element disposed between, and electrically coupling together, the second contact pad and the second doped semiconductor layer of the second epi-structure;
• and
• a first through-via and a second through-via that extend through the first and second epi-structures,respectively, wherein the first through-via electrically couples together the first doped semiconductor layer in the first epi-structure and the third contact pad;
• wherein the carrier substrate includes a substrate and an insulation film disposed between the substrate and the first, second, third and fourth contact pads.