US 9,224,460 B2 · Solid memory

Abstract

Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of the record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure with a thin film containing Sb and a thin film containing Te. The solid memory can realize the number of times of repeated recording and erasing of 1015.

Claims20

Dependent claims

A method for recording data in a solid memory, comprising:

recording data in the solid memory by causing phase-separation of a substance constituting the solid memory so as to change electric characteristics of the solid memory, the substance including a laminated structure of alternating thin film layers forming artificial superlattices, the alternating thin film layers including a first thin film layer and a second thin film layer, the first thin film layer being a binary alloy.

Dependencies are inferred from the claim text.

Facts

Application

13/923,447Filed 21 Jun 2013 · continuation

Priority

JP 2007-22597831 Aug 2007

Published

US 2013/0286725 A131 Oct 2013

Granted

29 Dec 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

G11C 13/0004
Using resistive RAM [RRAM] elements: comprising amorphous/crystalline phase transition cells
B82Y 10/00
Nanotechnology for information processing, storage or transmission
G11B 7/2433
Comprising inorganic materials only, e.g. ablative layers: metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge,…
H10N 70/026
Formation of switching materials, e.g. deposition of layers: by physical vapor deposition, e.g. sputtering

Family

PCT/JP2008/060856Parent of this continuation · filed 13 Jun 2008

US 2013/0286725 A1Pre-grant publication · published 31 Oct 2013

Application12/733,295Parent of this continuation

US 2010/0207090 A1Published application

US 9,224,460 B2This patent

From the US filing history. Foreign family members aren’t listed.

Solid memory

Life of this patent

Solid memory

Life of this patent

Abstract

Claims20