Nano-electro-mechanical based memory

A memory arrangement comprising a plurality of cells arranged in an array structure, wherein each cell comprises:

• a memory element and a read selector in series, the memory element being a nano-electro-mechanical switch comprising an anchor, a beam fixed to the anchor, a first control gate, and a second control gate, for controlling the position of the beam, a first output node against which the beam can be positioned, the read selector comprising a first selector terminal, a second selector terminal, the first selector terminal connected to the first output node,
• wherein first control gates of nano-electro-mechanical switches belonging to a same word are connected together by a first write word line serving as control gate, and second control gates of nano-electro-mechanical switches belonging to a same word are connected together by a second write word line serving as control gate.