Method for forming metal electrode, method for manufacturing semiconductor light emitting elements and nitride based compound semiconductor light emitting elements

A method for manufacturing a semiconductor light emitting element, comprising:

• forming a first-type semiconductor layer, an active layer, and a second-type semiconductor layer on a substrate, such that the active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer;
• forming a bonding metal layer on the second-type semiconductor layer,
• forming a reflective metal layer on the bonding metal layer;
• forming a second-type electrode by inverting the bonding metal layer and the reflective metal layer through a heat treatment process;
• attaching a metallic supporting layer on the second-type electrode;
• removing the substrate;
• and
• forming a first-type electrode on the first-type semiconductor layer, wherein,
• the reflective metal layer comprises one selected from the group consisting of Al, Rh, Ru, Ag, and alloys including at least one of Al, Rh, Ru, and Ag,
• the bonding metal layer comprises one selected from the group consisting of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Ca, Sr, Ba, and alloys including at least one of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Ca, Sr, and Ba.

A method for manufacturing a semiconductor light emitting element, comprising:

• forming a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, on a substrate, such that the active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer;
• forming a bonding metal layer on the second-type semiconductor layer, the bonding metal layer comprising Cu, In, or an alloy thereof;
• forming a reflective metal layer on the bonding metal layer, the reflective metal layer comprising Ag;
• heat treating the bonding metal layer and the reflective metal layer to invert the bonding metal layer and the reflective metal layer and thereby form a second-type electrode;
• attaching a metallic supporting layer on the second-type electrode;
• removing the substrate;
• and
• forming a first-type electrode on the first-type semiconductor layer.