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US 9,214,573 B2Granted
Bypass diode
AssigneeSharp Kabushiki Kaisha
InventorKeiji Shimada
Life of this patent
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Abstract
A bypass diode includes a semiconductor substrate having a first surface and a second surface opposite to each other, a p electrode as a first conductive type electrode and an n electrode as a second conductive type electrode arranged on the first surface, a back surface electrode arranged on the second surface and having a polarity identical to that of the semiconductor substrate, a first oxide layer arranged on the first surface, and a second oxide layer arranged on the second surface.
Claims8
A bypass diode, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to each other;
- a first conductive type electrode and a second conductive type electrode arranged on said first surface;
- a back surface electrode arranged on said second surface and having a polarity identical to that of said semiconductor substrate;
- a first oxide layer arranged on said first surface;
- and
- a second oxide layer arranged on said second surface.
3 more elements
Dependencies are inferred from the claim text.