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US 9,214,353 B2Granted
Systems and methods for laser splitting and device layer transfer
AssigneeSolexel, Inc.
InventorsTakao Yonehara, Virenda V. Rana, Sean Seutter, Mehrdad M. Moslehi, Subramanian Tamilmani
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Abstract
Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.
Claims8
A method for splitting and separating a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, microelectro-mechanical system (MEMS), or optoelectronic devices from a donor wafer;
- comprising:
- using laser irradiation on the same side which contains said devices, said laser irradiation using a focused laser beam scanned across said donor wafer and forming a two-dimensional separation layer of micro-crack spots;
- and
- using a liquid nitrogen spray to facilitate releasing said crystalline semiconductor material along said separation layer.
1 more element
Dependencies are inferred from the claim text.