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US 9,209,215 B2Granted
Photoelectric conversion apparatus and imaging system using the photoelectric conversion apparatus
AssigneeCanon Kabushiki Kaisha
InventorTakanori Watanabe
Life of this patent
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Abstract
In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region.
Claims11
A photoelectric conversion apparatus comprising:
- a photoelectric conversion portion including a first semiconductor region of a first conductivity type arranged in a semiconductor substrate;
- a charge holding portion including a second semiconductor region of the first conductivity type arranged in the semiconductor substrate and configured to hold a charge generated by the photoelectric conversion portion;
- a third semiconductor region of the first conductivity type arranged in the semiconductor substrate;
- a first gate electrode arranged on a region between the second semiconductor region and the third semiconductor region and configured to transfer a charge of the second semiconductor region into the third semiconductor region;
- and
- an isolation portion including a first part, a second part and a third part of an insulator, wherein
- the first semiconductor region is arranged between the first part of the insulator and the second semiconductor region in a first cross section including a first direction along which the first semiconductor region and the second semiconductor region are arranged,
- the second semiconductor region is arranged between the second part and the third part of the insulator in a second cross section including a second direction intersecting the first direction, and
- in the second cross section, the second semiconductor region is arranged at a depth shallower than a bottom of the second part and a bottom of the third part of the insulator.
6 more elements
Dependencies are inferred from the claim text.