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US 9,196,753 B2Granted
Select devices including a semiconductive stack having a semiconductive material
AssigneeMicron Technology, Inc.
InventorsD. V. Nirmal Ramaswamy, Gurtej Sandhu
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Abstract
Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.
Claims31
A select device, comprising:
- a semiconductive stack including at least one semiconductive material formed on a first electrode, wherein the semiconductive stack has a thickness of 700 angstroms or less, and wherein each of the at least one semiconductive material has an associated band gap of 4 electron volts or less, and wherein the at least one semiconductive material is a first partially nanocrystallized semiconductive material and the semiconductive stack includes an amorphous semiconductive material formed on the first partially nanocrystallized semiconductive material, and a second partially nanocrystallized semiconductive material formed on the amorphous semiconductive material;
- and
- a second electrode formed on the semiconductive stack.
A bipolar select device, comprising:
- a semiconductive stack formed on a first electrode, the semiconductive stack including an amorphous semiconductive material located between a first partially nanocrystallized semiconductive material and a second partially nanocrystallized semiconductive material, wherein the first partially nanocrystallized semiconductive material abuts the first electrode and the semiconductive stack has a thickness of 700 angstroms or less;
- and
- a second electrode formed on the semiconductive stack, wherein the second partially nanocrystallized semiconductive material abuts the second electrode.
A symmetrical bipolar select device, comprising:
- a semiconductive stack formed on a first electrode, the semiconductive stack including a an amorphous semiconductive material located between a plurality of partially nanocrystallized semiconductive materials each having a nanocrystallization of fifty percent or less, wherein the semiconductive stack has a thickness of 700 angstroms or less, and wherein the partially nanocrystallized semiconductive material the amorphous semiconductive material each has an associated band gap of 4 electron volts or less;
- and
- a second electrode formed on the semiconductive stack.
A bipolar select device, comprising:
- a semiconductive stack formed on a first electrode, the semiconductive stack including a first partially nanocrystallized semiconductive material, an amorphous semiconductive material, and a second partially nanocrystallized semiconductive material, wherein the semiconductive stack has a thickness of 700 angstroms or less, and wherein each material of the semiconductive stack has an associated band gap of 4 electron volts or less;
- and
- a second electrode formed on the semiconductive stack.
A symmetrical bipolar select device, comprising:
- a semiconductive stack formed on a first electrode, the semiconductive stack including an amorphous semiconductive material located between a first partially nanocrystallized semiconductive material and a second partially nanocrystallized semiconductive material, wherein the symmetrical bipolar select device provides a symmetrical current density versus voltage curve and the semiconductive stack has a thickness of 700 angstroms;
- and
- a second electrode formed on the semiconductive stack.
A method of forming a bipolar select device, comprising:
- forming a semiconductive stack having a thickness of 700 angstroms or less on a first electrode, wherein each material of the semiconductive stack has an associated band gap of 4 electron volts or less;
- doping at least one semiconductive material of the semiconductive stack with a crystallization retardant;
- doping at least one semiconductive material of the semiconductive stack with Ge to promote crystallinity;
- performing an anneal of the semiconductive stack at an anneal temperature of 500 degrees Celsius of less before forming the second electrode on the semiconductive stack;
- and
- forming a second electrode on the semiconductive stack.
3 more elements
A cross-point memory array, comprising:
- a first number of conductive lines;
- a second number of conductive lines intersecting the first number of conductive lines;
- and
- a bipolar select device at each of the number intersections of the first number and the second number of conductive lines, wherein the bipolar select device includes:
- a semiconductive stack having a thickness of 700 angstroms or less and including at least one semiconductive material formed on a first electrode, wherein each semiconductive material of the semiconductive stack has an associated band gap of 4 electron volts or less, and wherein the at least one semiconductive material is a first partially nanocrystallized semiconductive material and the semiconductive stack includes an amorphous semiconductive material formed on the first partially nanocrystallized semiconductive material, and a second partially nanocrystallized semiconductive material formed on the amorphous semiconductive material;
- and
- a second electrode formed on the semiconductive stack.
4 more elements
Dependencies are inferred from the claim text.