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US 9,196,280 B2Granted
Low-field magnetic domain wall injection pad and high-density storage wire
AssigneeMarquette University
InventorAndrew Kunz
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Abstract
Disclosed herein are magnetic storage devices and uses therefore. The devices comprise an injection pad and a nanowire extending from an outer edge of the injection pad. The injection pad and the nanowire of the disclosed magnetic storage devices have a geometry that is designed to optimize high density memory storage via low magnetic field domain wall shifting. The devices may be utilized, for example, for generating and storing magnetic domain walls for application in memory devices, sensor devices, and logic devices.
Claims14
A magnetic storage device comprising:
- (a) an injection pad, wherein the injection pad is circular;
- and
- (b) a nanowire extending from the injection pad, wherein the nanowire has an outer edge that extends tangentially and linearly along an X-axis from an outer curved edge of the injection pad;
- wherein:
- the injection pad and nanowire comprise magnetic metal material and are monolithic;
- the nanowire has a top width of 20-200 nm extending along a Y-axis perpendicular to the X-axis;
- the injection pad has a top surface area parallel to a plane defined by the X-axis and the Y-axis of 3×104−8×105 nm2);
- and
- the injection pad and nanowire have a thickness of 1-50 nm along a Z-axis perpendicular to the X-axis and the Y-axis.
6 more elements
Dependencies are inferred from the claim text.