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US 9,190,440 B2Granted
Image sensor and method for fabricating the same
AssigneeSK hynix Inc.
InventorsDo-Hwan Kim, Yun-Hee Yang, Dae-Woo Kim, Jong-Chae Kim, Su-Hwan Lim
Life of this patent
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Abstract
An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.
Claims19
An image sensor, comprising:
- a transfer gate formed on a front-side of a substrate;
- a photoelectric conversion region formed on a side of the transfer gate;
- a floating diffusion region including a trench formed on another side of the transfer gate, a barrier layer, which covers a bottom of the trench, and a conducting layer, which is gap-filled in the trench.
An image sensor, comprising:
- a transfer gate fanned on a front-side of a substrate;
- a photoelectric conversion region formed on a side of the transfer gate;
- a floating diffusion region including a trench, which is formed on the other side of the transfer gate, a barrier layer, which covers a bottom of the trench, and a conducting layer, which is gap-filled in the trench;
- and
- a trap region formed under the trench.
2 more elements
An image sensor, comprising:
- a floating diffusion region with a barrier layer suitable for preventing the generation of unwanted charges in the floating diffusion layer,
- wherein the barrier layer covers a bottom plane of a trench formed on a side of a transfer gate and a portion or all of a side plane of the trench.
Dependencies are inferred from the claim text.