Silicon-on-insulator high power amplifiers
AssigneePurdue Research Foundation
InventorsSaeed Mohammadi, Sultan R. Helmi, Jing-Hwa Chen, Hossein Pajouhi
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Abstract
Illustrative embodiments of power amplifiers and associated methods are disclosed. In at least one embodiment, a method may include fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers; removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier; and securing the SOI substrate, after removing at least some of the second silicon layer, to an electrically non-conductive and thermally conductive substrate.
Claims9
A method comprising:
- fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers;
- removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier;
- and
- securing the SOI substrate, after removing at least some of the second silicon layer, to an electrically non-conductive and thermally conductive substrate;
- wherein the power amplifier comprises:
- a plurality of transistors formed in the first silicon layer of the SOI substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate;
- and
- a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors;
- wherein the plurality of transistors are electrically coupled in a series stack and an output of the power amplifier is provided across the series stack.
A method, comprising:
- fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers;
- removing all of the second silicon layer from the SOI substrate, after fabricating the power amplifier;
- and
- securing the buried oxide layer of the SOI substrate, after removing all of the second silicon layer, to an aluminum nitride (AIN) substrate.
A method, comprising:
- fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers;
- removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier;
- and
- securing the SOI substrate, after removing at least some of the second silicon layer, to an aluminum nitride (AIN) substrate by depositing AIN on a side of the SOI substrate opposite the power amplifier using pulsed laser deposition.
Dependencies are inferred from the claim text.