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US 9,190,263 B2Granted
Method for forming SiOCH film using organoaminosilane annealing
AssigneeASM IP Holding B.V.
InventorsDai Ishikawa, Kiyohiro Matsushita, Akinori Nakano, Shintaro Ueda, Hirofumi Arai
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Abstract
A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.
Claims15
A method for forming a modified low-k SiOCH film on a substrate, comprising:
- (i) providing a low-k SiOCH film formed on a substrate by flowable CVD;
- (ii) exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film;
- and
- (iii) curing the low-k SiOCH film obtained in step (ii).
1 more element
Dependencies are inferred from the claim text.