Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

A data memory including memory elements arranged in a three-dimensional pattern defined by rectangular coordinates having orthogonal x, y and z-directions and with a plurality of parallel planes stacked in the z-direction, the memory farther comprising:

• a plurality of first conductive lines elongated in the z-direction through the plurality of planes and arranged in a two-dimensional rectangular array in the x and y-directions,
• a plurality of second conductive lines elongated in the x-direction across individual planes and spaced apart in the y-direction between and separated from the first plurality of conductive lines in the individual planes, wherein the first and second conductive lines cross adjacent each other at a plurality of locations across the individual planes,
• a plurality of non-volatile re-programmable memory elements individually connected between the first and second conductive lines adjacent the crossings thereof at the plurality of locations, and
• a plurality of select devices arranged to individually connect selected ones of the plurality of first conductive lines to selected ones of a plurality of third conductive lines;
• select circuits through which operating voltages are applicable to a selected second conductive line and via the plurality of third conductive lines to a group of selected first conductive lines adjacent the selected word line;
• and
• wherein the memory elements are sandwiched in the y-direction between the first and second conductive lines and are provided in continuous sheets of non-volatile memory element (NVM) material that individually extends past a plurality of crossings of the first and second conductive lines.