# US 9,184,338 B2 · Semiconductor device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,184,338 B2 - Document ID: US9184338B2 - Status: Granted - Kind: B2 - Application number: 14/347,443 - Filed: 2011-09-28 - Published: 2014-09-25 - Granted: 2015-11-10 - Earliest claimed: 2011-09-28 - Assignees: Bbsa Limited; Dow A Electronics Materials Co., Ltd. - Applicants: Meoung Whan Cho; Seog Woo Lee; Ryuichi Toba; Yoshitaka Kadowaki - Inventors: Meoung Whan Cho; Seog Woo Lee; Ryuichi Toba; Yoshitaka Kadowaki - Web page: https://patentgrep.com/patent/US9184338B2 ## CPC - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies - H10H 20/018: {Bonding of wafers} - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10P 14/20: of semiconductor materials - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: a first step of forming a semiconductor layer on a growth substrate with a lift-off layer therebetween; a second step of partially removing the semiconductor layer to form grooves in a grid pattern such that the growth substrate is partially exposed at the bottom of the grooves, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a third step of forming a conductive support body for integrally supporting the plurality of the semiconductor structures; a fourth step of removing the lift-off layer using a chemical lift-off process; and a fifth step of dividing the conductive support body between the semiconductor structures thereby singulating a plurality of semiconductor devices having the respective semiconductor structures supported by the conductive support body, wherein in the fourth step, in supplying an etchant to the grooves via through-holes in the conductive support body, the through-holes being provided in a portion above the grooves, the lift-off layer is etched from only one of the side surfaces of each of the semiconductor structures. ### Claim 2 (depends on 1) The method of manufacturing a semiconductor device according to claim 1, wherein prior to the fourth step, supplying the etchant only to the one side surface, which is firstly etched, of the four side surfaces of each semiconductor structure, and forming embedded parts in the grooves for inhibiting the etchant from being supplied to the other three side surfaces of each semiconductor structure. ### Claim 3 (depends on 2) The method of manufacturing a semiconductor device according to claim 2, wherein the conductive support body also serves as the embedded parts. ### Claim 4 (depends on 2) The method of manufacturing a semiconductor device according to claim 2, wherein the embedded parts are provided in the respective grooves so as to cover all of the said other three side surfaces of each semiconductor structure. ### Claim 5 (depends on 2) The method of manufacturing a semiconductor device according to claim 2, wherein the embedded parts are provided in the respective grooves so as to cover opposite two side surfaces of the said other three side surfaces of each semiconductor structure. ### Claim 6 (depends on 3) The method of manufacturing a semiconductor device according to claim 3, wherein in the third step, the conductive support body is formed by plating. ### Claim 7 (depends on 3) The method of manufacturing a semiconductor device according to claim 3, wherein the embedded parts are provided in the respective grooves so as to cover all of the said other three side surfaces of each semiconductor structure. ### Claim 8 (depends on 3) The method of manufacturing a semiconductor device according to claim 3, wherein the embedded parts are provided in the respective grooves so as to cover opposite two side surfaces of the said other three side surfaces of each semiconductor structure. ### Claim 9 (depends on 6) The method of manufacturing a semiconductor device according to claim 6, the third step comprising: a step of filling a space in each groove, where the embedded parts are not formed, with resin; a step of growing a conductive support body also serving as the embedded parts, by plating on surfaces of the semiconductor structures, on a surface of the resin, and at the exposed bottom of the grooves; a step of forming the through-holes in the conductive support body; and a step of removing the resin via the through-holes, thereby forming cavities in the portions of the grooves, and in the fourth step, supplying an etchant to the cavities in the grooves via the through-holes. ### Claim 10 (depends on 6) The method of manufacturing a semiconductor device according to claim 6, wherein the embedded parts are provided in the respective grooves so as to cover all of the said other three side surfaces of each semiconductor structure. ### Claim 11 (depends on 6) The method of manufacturing a semiconductor device according to claim 6, wherein the embedded parts are provided in the respective grooves so as to cover opposite two side surfaces of the said other three side surfaces of each semiconductor structure. ### Claim 12 (depends on 9) The method of manufacturing a semiconductor device according to claim 9, wherein the embedded parts are provided in the respective grooves so as to cover all of the said other three side surfaces of each semiconductor structure. ### Claim 13 (depends on 9) The method of manufacturing a semiconductor device according to claim 9, wherein the embedded parts are provided in the respective grooves so as to cover opposite two side surfaces of the said other three side surfaces of each semiconductor structure.