Titanium incorporation into absorber layer for solar cell
AssigneeGlobalfoundries Inc.
InventorsMarinus J. Hopstaken, David B. Mitzi, Wei Wang, Mark T. Winkler
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Abstract
A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.
Claims15
A method for fabricating a photovoltaic device, comprising:
- forming a film including titanium on a conductive layer formed on a substrate;
- forming an absorber layer including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula:
- Cu2-xZn1+ySn(S1-zSez)4+q wherein 0≦x≦1;
- 0≦y≦1;
- 0≦z≦1;
- −1≦q≦1 (CZTS) on the film;
- annealing the absorber layer to diffuse titanium therein and to recrystallize the CZTS material of the film;
- forming a buffer layer on the absorber layer;
- and
- forming a transparent conductive layer on the buffer layer.
A method for fabricating a photovoltaic device, comprising:
- forming a conductive layer on a substrate;
- forming an absorber layer including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula:
- Cu2-xZn1+ySn(S1-zSez)4+q wherein 0≦x≦1;
- 0≦y≦1;
- 0≦z≦1;
- −1≦q≦1 (CZTS) on the conductive layer;
- doping the absorber layer with titanium;
- annealing the absorber layer to recrystallize the CZTS material of the film;
- forming a buffer layer on the absorber layer;
- and
- forming a transparent conductive layer on the buffer layer.
Dependencies are inferred from the claim text.