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US 9,184,047 B2Granted
Multi-step system and method for curing a dielectric film
AssigneeTokyo Electron Limited
InventorsJunjun Liu, Eric M. Lee, Dorel L. Toma
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Abstract
A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.
Claims20
A method of curing a low-k dielectric film, comprising:
- disposing a substrate, having said low-k dielectric film thereon, on a substrate holder in a curing system, the substrate holder having a heating element therein;
- heating the substrate by controlling said heating element;
- exposing said low-k dielectric film to infrared (IR) radiation to facilitate a first curing mechanism within the dielectric film;
- exposing said low-k dielectric film to ultraviolet (UV) radiation to facilitate a second curing mechanism that is different from the first curing mechanism within the low-k dielectric film;
- and
- curing said low-k dielectric film by varying delivery of said IR radiation and said UV radiation to the low-k dielectric film to facilitate said first and second curing mechanism at different stages of curing such that mechanical properties of the low-k dielectric film are improved while maintaining a dielectric constant of the low-k film less than a dielectric constant of silicon dioxide.
3 more elements
Dependencies are inferred from the claim text.