Reading memory data

A circuit comprising:

• a memory array comprising K number of rows of memory cells, K being a positive non-zero integer;
• a reference column, the reference column comprising:
• a reference data line;
• and
• M reference cells electrically coupled to the reference data line, M being a positive non-zero integer no greater than K;
• and
• a sensing circuit configured to determine a value stored in a memory cell of the memory array based on signals on the reference data line and a data line associated with the memory cell.

A method, comprising:

• activating a memory cell of a column of memory cells, the column of memory cells associated with a data line;
• generating a first logical value based on a first voltage level of the data line upon an occurrence of a voltage level of a reference data line reaching a trip point;
• outputting a second logical value based on a second voltage level of the data line prior to the occurrence of the voltage level of the reference data line reaching the trip point;
• and
• outputting the first logical value after the occurrence of the voltage level of the reference data line reaching the trip point.