Carbon nanotube crossbar based nano-architecture
AssigneeBoard of Regents, The University of Texas System
InventorBao Liu
Life of this patent
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Abstract
Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely accepted as the building blocks of next generation VLSI circuits. A CNT crossbar based nano-architecture, includes layers of orthogonal carbon nanotubes with electrically bistable and charge holding molecules at each crossing, forming a dense array of reconfigurable double gate carbon nanotube field effect transistors (RDG-CNFETs) and programmable interconnects, which is addressed via a voltage controlled nanotube addressing circuits on the boundaries.
Claims5
A double gate carbon nanotube field effect transistor, comprising:
- a first carbon nanotube (CNT) positioned as the front gate of the double gate carbon nanotube field effect transistor;
- a second doped CNT orthogonal to the first CNT, wherein the second CNT is the source, the drain, and the channel of the double gate carbon nanotube field effect transistor;
- and
- a third CNT positioned as the back gate, wherein the third CNT has the same orientation as the first CNT;
- wherein the double gate carbon nanotube field effect transistor is reconfigurable to be open, short, FET, or via;
- wherein electrically bistable molecules are coated around the first CNT and sandwiched between the first CNT and the second CNT;
- wherein a dielectric layer is formed between the second CNT and the third CNT;
- and
- wherein redox active molecules are coated around the third CNT gate and sandwiched between the third CNT and the dielectric layer.
Dependencies are inferred from the claim text.