MEMS devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShang-Ying Tsai, Hung-Hua Lin, Lung Yuan Pan, Yao-Te Huang, Hsin-Ting Huang, Jung-Huei Peng
Life of this patent
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Abstract
A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
Claims20
A method comprising:
- forming a routing conductive line over a substrate;
- forming a dielectric layer over the routing conductive line;
- forming an escort ring over the dielectric layer;
- forming a sacrificial layer over the escort ring;
- forming an opening in the sacrificial layer, the escort ring, and the dielectric layer, wherein the routing conductive line is exposed through the opening;
- forming a contact plug in the opening;
- forming a conductive component over and connected to the contact plug, wherein the conductive component forms a portion of a Micro-Electro-Mechanical System (MEMS) device;
- and
- removing the sacrificial layer to form an air gap.
A method comprising:
- forming a routing conductive line over a semiconductor substrate;
- forming a dielectric layer over the routing conductive line;
- forming an escort ring over the dielectric layer, with the escort ring being a full ring with a first opening, wherein a portion of the dielectric layer is exposed through the first opening;
- forming a sacrificial layer over the escort ring and the dielectric layer;
- forming a second opening to extend from a top surface of the sacrificial layer to the routing conductive line through anisotropic etching, wherein a top surface of an inner ring portion of the escort ring is exposed to the second opening;
- filling the second opening with a conductive material to form a conductive feature;
- and
- removing the sacrificial layer to form an air gap underlying the conductive feature.
A method comprising:
- forming a dielectric layer over a semiconductor substrate;
- forming an escort ring over the dielectric layer, with the escort ring being a full ring with a first opening, wherein a portion of the semiconductor substrate is exposed through the first opening;
- forming a sacrificial layer over the escort ring and the dielectric layer;
- forming a second opening to extend from a top surface of the sacrificial layer to the semiconductor substrate through anisotropic etching, wherein a top surface of an inner ring portion of the escort ring is exposed to the second opening;
- filling the second opening with a conductive material to form a conductive feature electrically connected to the semiconductor substrate;
- and
- removing the sacrificial layer.
Dependencies are inferred from the claim text.