Power semiconductor device and power conversion device
AssigneeHitachi Automotive Systems, Ltd.
InventorsTokihito Suwa, Yujiro Kaneko, Yusuke Takagi, Shinichi Fujino, Takahiro Shimura
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AssigneeHitachi Automotive Systems, Ltd.
InventorsTokihito Suwa, Yujiro Kaneko, Yusuke Takagi, Shinichi Fujino, Takahiro Shimura
Estimating the term…
A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.
A power semiconductor device, comprising:
Dependencies are inferred from the claim text.