Vertical microcoaxial interconnects

#Today's electronic devices often include three-dimensional integrated circuits having multiple layers of active and passive electronic components that must be integrated both horizontally and vertically into a single circuit. Vertical interconnects are needed to facilitate the electrical connections of the components on the separate layers. Unfortunately, current interconnects only provide an electrical transition to these components in high-frequency packaging systems. In addition, such interconnects often suffer from signal losses and surface connection issues.

#The present disclosure may be better understood with reference to the following figures. Matching reference numerals designate corresponding parts throughout the figures, which are not necessarily drawn to scale.

#FIG. 1 is a top perspective view of an embodiment of a vertical microcoaxial interconnect.

#FIG. 2 is a bottom view of the interconnect of FIG. 1.

#As described above, three-dimensional integrated circuits have multiple layers of active and passive electronic components that must be vertically integrated into a single circuit and vertical interconnects are needed to facilitate the electrical connections between components on separate layers. Disclosed herein are embodiments of a vertical microcoaxial interconnect that can be used in such integrated circuits.

#In the following disclosure, various specific embodiments are described. It is to be understood that those embodiments are example implementations of the disclosed inventions and that alternative embodiments are possible. All such embodiments are intended to fall within the scope of this disclosure.

#FIG. 1 illustrates an embodiment of a vertical microcoaxial interconnect 10. As shown in that figure, the interconnect 10 comprises a dielectric substrate 12 having a first or top side 14 and a second or bottom side 16 (FIG. 2). In some embodiments, the dielectric substrate 12 is made of high-resistivity silicon. It is noted, however, that other materials that inhibit the flow of electric current could be used to form the substrate 12. In some embodiments, the substrate 12 can be approximately 250 to 350 μm (e.g., 300 μm) thick and can be generally rectangular or circular.