First and second microstrip networks stacked in an inverted arrangement to each other using an integrated support and shielding structure

An assembly comprising:

• at least one first microstrip network including at least one first transmission line disposed on a first surface of a first dielectric layer, the first dielectric layer including a first ground plane disposed on a second surface of the first dielectric layer;
• at least one second microstrip network including at least one second transmission line disposed on a first surface of a second dielectric layer, the second dielectric layer including a second ground plane disposed on a second surface of the second dielectric layer, the at least one second microstrip network being inverted relative to the at least one first microstrip network;
• at least one integrated support and shielding (ISS) structure disposed between the at least one second microstrip network and the at least one first microstrip network, the ISS structure including a first cavity accommodating the at least one first microstrip network and a second cavity accommodating at least one second microstrip network;
• and
• wherein the first dielectric layer and the second dielectric layer are made from different dielectric materials.