Photovoltaic cell and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMitsunaga Saito, Masahiro Hosoya
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Abstract
According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.
Claims15
A photovoltaic cell manufactured by a method comprising:
- forming a structure comprising a pair of electrodes which are arranged apart from each other, and a hetero junction type photoelectric conversion layer interposed between the electrodes and including a p-type semiconductor and a n-type semiconductor;
- and
- annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer,
- the photovoltaic cell comprising:
- a pair of electrodes which are arranged apart from each other;
- and
- a hetero junction type photoelectric conversion layer including a p-type semiconductor and a n-type semiconductor between the electrodes;
- where
- the p-type semiconductor and the n-type semiconductor are respectively self-organized to form a microphase-separated structure, and
- the self-organized p-type semiconductor and n-type semiconductor are oriented in a direction perpendicular to the pair of electrodes and entangled with each other.
A photovoltaic cell manufactured by a method comprising:
- forming a hetero junction type photoelectric conversion layer including a p-type semiconductor and a n-type semiconductor between a pair of electrodes which are arranged apart from each other;
- and
- annealing the photoelectric conversion layer thermally while applying an AC/DC superposition voltage obtained by superposing a DC voltage on an AC voltage to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer, wherein the AC/DC superposition voltage has a frequency of 0.01 kHz or more and less than 1 kHz,
- the photovoltaic cell comprising:
- a pair of electrodes which are arranged apart from each other;
- and
- a hetero junction type photoelectric conversion layer including a p-type semiconductor and a n-type semiconductor between the electrodes;
- where
- the p-type semiconductor and the n-type semiconductor are respectively self-organized to form a microphase-separated structure, and
- the self-organized p-type semiconductor and n-type semiconductor are oriented in a direction perpendicular to the pair of electrodes and entangled with each other.
Dependencies are inferred from the claim text.