Organic semiconductor thin film transistor and method of fabricating the same
AssigneeLG Display Co., Ltd.
InventorChang-Wook Han
Life of this patent
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Abstract
A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.
Claims16
A thin film transistor, comprising:
- source and drain electrodes on a substrate;
- a small molecule organic semiconductor layer on the source and drain electrodes;
- a gate insulating layer on the small molecule organic semiconductor layer and covering a top surface and lateral surfaces of the small molecule organic semiconductor layer;
- and
- a gate electrode on the gate insulating layer,
- wherein a portion of the drain electrode is exposed by the small molecule organic semiconductor layer and the gate insulating layer.
Dependencies are inferred from the claim text.