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US 9,178,150 B2Granted
Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same
AssigneeSK hynix Inc.
InventorSung Min Lee
Life of this patent
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Abstract
A resistive memory device capable of implementing a multi-level cell, a method of fabricating the same, and a memory apparatus and data processing system including the same are provided. The resistive memory device includes a lower electrode, a first phase-change material layer formed over the lower electrode, a second phase-change material layer formed to surround an outer sidewall of the first phase-change material layer, and an upper electrode formed over the first phase-change material layer and the second phase-change material layer.
Claims6
A method of fabricating a resistive memory device, the method comprising:
- providing a semiconductor substrate in which a lower electrode is formed;
- sequentially forming a first phase-change material layer, an electrode layer, and a hard mask over the semiconductor substrate in which the lower electrode is formed;
- patterning the hard mask, the electrode layer, and the first phase-change material layer so that the first phase-change material layer is in contact with the lower electrode;
- and
- doping and curing a preset combination element into the first phase-change material layer to change an outer circumference of the first phase-change material layer to a second phase-change material layer having a predetermined thickness.
2 more elements
Dependencies are inferred from the claim text.