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US 9,178,146 B2Granted
Resistive-switching memory elements having improved switching characteristics
AssigneeIntermolecular, Inc.
InventorsRonald J. Kuse, Tony P. Chiang, Imran Hashim
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Abstract
Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.
Claims16
A resistive-switching memory element comprising:
- a first electrode and a second electrode;
- a switching layer between the first electrode and the second electrode,
- wherein the switching layer comprises hafnium oxide and has a first thickness,
- wherein the switching layer comprises a first portion and a second portion,
- wherein the first portion of the switching layer comprises an oxygen deficient metal oxide,
- wherein the second portion of the switching layer comprises a metal oxide,
- wherein an oxygen concentration in the second portion of the switching layer is greater than an oxygen concentration in the first portion of the switching layer;
- and
- a coupling layer between the switching layer and the second electrode,
- wherein the coupling layer comprises a first portion and a second portion,
- wherein the first portion of the coupling layer comprises substantially titanium metal,
- wherein the second portion of the coupling layer comprises substantially titanium oxide, and
- wherein the first portion of the switching layer directly interfaces the second portion of the coupling layer.
10 more elements
A resistive-switching memory element comprising:
- a first electrode comprising doped silicon;
- a second electrode comprising a material selected from the group consisting of a transition metal, a transition metal alloy, a transition metal nitride, and a transition metal carbide;
- a switching layer between the first electrode and the second electrode,
- wherein the switching layer comprises a first portion and a second portion,
- wherein the first portion of the switching layer comprises an oxygen deficient metal oxide,
- wherein the second portion of the switching layer comprises a metal oxide,
- wherein an oxygen concentration in the second portion of the switching layer is greater than an oxygen concentration in the first portion of the switching layer,
- wherein at least one of the oxygen deficient metal oxide and the metal oxide comprises a metal oxide selected from a group consisting of hafnium oxide, zirconium oxide, titanium oxide, cerium oxide, zinc oxide, and copper oxide;
- and
- a coupling layer between the resistive-switching metal oxide and the second electrode,
- wherein the coupling layer comprises a first portion and a second portion,
- wherein the first portion of the coupling layer comprises substantially titanium metal,
- wherein the second portion of the coupling layer comprises substantially titanium oxide, and
- wherein the first portion of the switching layer directly interfaces the second portion of the coupling layer.
11 more elements
A resistive-switching memory element comprising:
- a first electrode and a second electrode;
- a switching layer disposed between the first and second electrode;
- and
- a coupling layer disposed between the switching layer and the second electrode;
- and
- wherein the switching layer comprises a first portion and a second portion disposed between the first portion and the first electrode;
- and
- wherein the first portion of the switching layer comprises a first density of oxygen vacancies;
- wherein the second portion of the switching layer comprises a second density of oxygen vacancies;
- wherein the first density is higher than the second density;
- wherein the coupling layer comprises a first portion and a second portion,
- wherein the first portion of the coupling layer comprises substantially the titanium metal,
- wherein the second portion of the coupling layer comprises substantially titanium oxide, and
- wherein the first portion of the switching layer directly interfaces the second portion of the coupling layer.
11 more elements
Dependencies are inferred from the claim text.