Resistive memory structure
AssigneeIndustrial Technology Research Institute
InventorsFrederick T. Chen, Pei-Yi Gu
Life of this patent
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Abstract
A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.
Claims20
A resistive memory structure comprising:
- at least one reactive layer extending along a first direction and a second direction;
- at least one electrode extending at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other;
- and
- at least one resistance-changing material, at least part of the resistance-changing material being disposed between the reactive layer and the electrode, wherein when ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.
Dependencies are inferred from the claim text.