Method for forming a PCRAM with low reset current
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsShyue Seng Tan, Eng Huat Toh
Life of this patent
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Abstract
Phase-change memory structures are formed with ultra-thin heater liners and ultra-thin phase-change layers, thereby increasing heating capacities and lowering reset currents. Embodiments include forming a first interlayer dielectric (ILD) over a bottom electrode, removing a portion of the first ILD, forming a cell area, forming a u-shaped heater liner within the cell area, forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD, forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion, and forming a dielectric spacer surrounding the protruding portion.
Claims20
A device comprising:
- a bottom electrode;
- a u-shaped heater liner;
- an interlayer dielectric (ILD) on the bottom electrode, surrounding the u-shaped heater liner;
- an interlayer dielectric structure surrounded by the u-shaped heater liner and including a protrusion extending above the u-shaped heater liner and a top surface of the ILD;
- a phase-change layer on the ILD, surrounding the interlayer dielectric structure;
- a dielectric spacer above the ILD and surrounding the protrusion;
- and
- a top electrode covering the ILD, the protrusion, and the dielectric spacer.
A device comprising:
- a bottom electrode;
- a u-shaped heater liner;
- an interlayer dielectric (ILD) on the bottom electrode, surrounding the u-shaped heater liner;
- an interlayer dielectric structure surrounded by the u-shaped heater liner and including a protrusion extending above the u-shaped heater liner and a top surface of the ILD;
- a phase-change layer on side surfaces of the protrusion;
- a dielectric spacer above the ILD and surrounding the protrusion;
- and
- a top electrode covering the ILD, the protrusion, and the dielectric spacer.
A device comprising:
- a bottom electrode;
- a u-shaped heater liner;
- an interlayer dielectric (ILD) on the bottom electrode, surrounding the u-shaped heater liner;
- an interlayer dielectric structure surrounded by the u-shaped heater liner and including a protrusion extending above the u-shaped heater liner and a top surface of the ILD;
- a phase-change layer, formed to substantially the same thickness as the u-shaped heater liner, the phase-change layer being on the ILD surrounding the interlayer dielectric structure and level with a top surface of an exposed portion of the u-shaped heater liner and/or the phase-change layer being on side surfaces of the protrusion to the same height as the protrusion;
- a dielectric spacer above the ILD and surrounding the protrusion;
- and
- a top electrode covering the ILD, the protrusion, and the dielectric spacer.
Dependencies are inferred from the claim text.