Magnetoresistive element and magnetic memory
OwnerYoungmin Eeh, Katsuya Nishiyama +4inventors
InventorsYoungmin Eeh, Katsuya Nishiyama, Daisuke Ikeno, Toshihiko Nagase, Tadashi Kai, Daisuke Watanabe
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OwnerYoungmin Eeh, Katsuya Nishiyama +4inventors
InventorsYoungmin Eeh, Katsuya Nishiyama, Daisuke Ikeno, Toshihiko Nagase, Tadashi Kai, Daisuke Watanabe
Estimating the term…
A magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.
A magnetoresistive element comprising:
A magnetoresistive element comprising:
Dependencies are inferred from the claim text.