Magnetoresistive element using specific underlayer material
AssigneeKabushiki Kaisha Toshiba
InventorsEiji Kitagawa, Tadashi Kai, Hiroaki Yoda
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Abstract
According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
Claims20
A magnetoresistive element comprising:
- a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction;
- a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction;
- an intermediate layer provided between the recording layer and the reference layer;
- and
- an underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided, wherein the underlayer comprises an amorphous structure, and contains one element selected from the group consisting of O, B and C.
A magnetoresistive element comprising:
- a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, wherein the recording layer contains FeB, Fe, or CoFe or CoFeB;
- a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction;
- an intermediate layer provided between the recording layer and the reference layer;
- an underlayer made of TiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided, wherein the underlayer contains one element selected from the group consisting of O and C;
- and
- a lower electrode provided on an opposite side of a surface of the underlayer on which the recording layer is provided, being in direct contact with the opposite side, and containing one element selected from the group consisting of Al, Si, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Ge, Ga, B, and Mg.
A magnetoresistive element comprising:
- a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction;
- a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction;
- an intermediate layer provided between the recording layer and the reference layer;
- and
- an underlayer made of a boride containing one element selected from the group consisting of Al, Si, Ti, V, Cr, Zr, Nb, Hf, Ta, W, Ge, and Ga and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided, wherein the underlayer contains one element selected from the group consisting of O and C.
Dependencies are inferred from the claim text.