Seebeck/peltier thermoelectric conversion device employing treated films of semiconducting material not requiring nanometric definition

A Seebeck/Peltier effect thermo-electric device comprising at least:

• a flat support of a low heat conductivity dielectric material,
• a substantially bi-dimensional semiconducting layer, deposited over at least one of the major surfaces of said support, made of a doped polycrystalline semiconducting material, having bulk electrical conductivity exceeding at least 1.0 Ω−1cm−1, said semiconducting layer having lattice defects distributed therein adapted to constitute phononic scattering centers having a state of charge and size that favor phononic scattering, said lattice defects being obtained by implanting in-situ the polycrystalline semiconducting material with ions of a gas selected from the group consisting of Group 0 of the Periodic Table of elements, nitrogen, fluorine and oxygen, at different kinetic energies and fluencies, said doped polycrystalline semiconducting material being either doped silicon or doped germanium,
• patterned metallizations of electrical connection deposited along opposite sides of said semiconducting layer, said metallization being configured to an external circuit;
• the Seebeck/Peltier effect thermo-electric device being configured to generate/apply a voltage difference at said opposite metallizations when opposite surfaces of the device coinciding with said patterned metallizations are at different temperatures.