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US 9,178,126 B2Granted
Thermoelectric elements using metal-insulator transition material
AssigneeElectronics and Telecommunications Research Institute
InventorsHyun-Tak Kim, Jeong Yong Choi, Hyun-Woo Jeon, Jae ho Choi, Gi-wan Seo
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Abstract
Provided is a thermoelectric device including a first electrode, a substrate electrically connected to the first electrode, a thin film on the substrate, and a second electrode on the thin film. The substrate and the thin film may be configured to exhibit a metallic property at a temperature over a critical temperature, thereby having a thermoelectric power of the device that is higher than that of a semiconductor junction.
Claims13
A thermoelectric device, comprising:
- a first electrode;
- a substrate disposed directly on the first electrode;
- a thin film disposed directly on the substrate;
- and
- a second electrode disposed directly on the thin film,
- wherein the thin film comprises a metal-insulating transition (MIT) material, and
- wherein the substrate and the thin film are configured in such a way that majority carriers thereof have types different from each other.
4 more elements
A thermoelectric device comprising:
- a substrate;
- a first electrode disposed directly on the substrate;
- a thin film disposed directly on the substrate and separated from the first electrode;
- and
- a second electrode disposed directly on the thin film,
- wherein the thin film comprises a metal-insulating transition (MIT) material, and
- wherein the substrate and the thin film are configured in such a way that majority carriers thereof have types different from each other.
4 more elements
Dependencies are inferred from the claim text.