Light emitting device having interstitial elements in grain boundaries of barrier layer
AssigneeLG Innotek Co., Ltd.
InventorHan Byul Kang
Life of this patent
Estimating the term…
Abstract
A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and an electrode on at least one of the first conductive semiconductor layers or the second semiconductor layer. The electrode includes an adhesive layer on the light emitting structure, a barrier layer on the adhesive layer, and a bonding layer on the barrier layer. The barrier layer includes a plurality of grain boundaries, and the grain boundaries include interstitial elements.
Claims20
A light emitting device comprising:
- a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer therebetween, and
- an electrode on at least one of the first conductive semiconductor layer or the second conductive semiconductor layer,
- wherein the electrode comprises:
- an adhesive layer on the light emitting structure;
- a barrier layer on the adhesive layer;
- and
- a bonding layer on the barrier layer, and
- wherein the barrier layer includes a plurality of grain boundaries, wherein interstitial elements are distributed in the barrier layer and the grain boundaries, wherein the grain boundaries include interstitial elements and eutectic materials between the interstitial elements.
A light emitting device comprising:
- a first semiconductor layer having N type dopants;
- a second semiconductor layer having P type dopants;
- an active layer between the first and second semiconductor layers;
- and
- an electrode on a portion of a top surface of at least one of the first or second semiconductor layers,
- wherein the electrode comprises:
- an adhesive layer on a top surface of at least one of the first semiconductor layer or the second semiconductor layer;
- a barrier layer on a top surface of the adhesive layer;
- and
- a bonding layer on a top surface of the barrier layer,
- wherein a plurality of grain boundaries are provided in the barrier layer,
- wherein a density of interstitial elements distributed in the grain boundary is higher than a density of interstitial elements distributed in a region between the grain boundaries,
- wherein the interstitial elements are distributed in the barrier layer and the grain boundaries, and
- wherein the grain boundaries include interstitial elements and eutectic materials between the interstitial elements.
Dependencies are inferred from the claim text.