Back to results
US 9,178,114 B2Granted
P-type doping layers for use with light emitting devices
AssigneeManutius IP, Inc.
InventorSteve Ting
Life of this patent
Estimating the term…
Abstract
A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.
Claims13
A light emitting device comprising:
- an n-type gallium nitride layer;
- an active layer adjacent to the n-type gallium nitride layer, the active layer comprising indium (In);
- an electron blocking layer adjacent to the active layer;
- and
- a p-type gallium nitride layer adjacent to the electron blocking layer,
- wherein the light emitting device comprises indium (In) at an interface between the electron blocking layer and the p-type gallium nitride layer, an In intensity having a first peak in the interface and a second peak in the active layer, the first peak of the In intensity in the interface being lower than the second peak of In intensity in the active layer, and
- wherein the p-type gallium nitride layer extends into one or more V-pits of the active layer.
4 more elements
Dependencies are inferred from the claim text.