Light emitting device having light extraction structure
AssigneesLG Electronics Inc., LG Innotek Co., Ltd.
InventorSun Kyung Kim
Life of this patent
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Abstract
A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.
Claims14
A method for manufacturing a light emitting device, the method comprising:
- applying a mask layer on a dielectric layer on a semiconductor layer;
- forming a pattern into the mask layer, the pattern comprising unit structures,
- wherein the unit structures have a hole or a rod shape, and
- wherein a wall of the unit structures is sloped at an angle of −45° to +45°, from a virtual vertical line parallel to a light emitting direction of the light emitting device;
- forming a light extraction structure into the dielectric layer using the mask layer;
- and
- controlling an average filling factor of the pattern by adjusting at least one of a slope of the wall, a radius of the unit structures, and a lattice structure of the light extraction structure,
- wherein the average filling factor of the light extraction structure is more than 5% and less than 37% with respect to an area of a light emission surface of the light emitting device, and
- wherein the average filling factor is a ratio of an average area of the pattern with respect to a total area of a light emission surface of the light emitting device.
A method for manufacturing a light emitting device, the method comprising:
- applying a mask layer on a light extraction layer;
- forming a pattern into the mask layer, the pattern comprising unit structures,
- wherein the unit structures have a hole or a rod shape, and
- wherein a wall of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line parallel to a light emitting direction of the light emitting device;
- and
- forming a light extraction structure into the light extraction layer using the mask layer,
- wherein an average filling factor of the light extraction structure is more than 5% and less than 37% with respect to an area of a light emission surface of the light emitting device, and
- wherein the average filling factor is a ratio of an average area of the pattern with respect to a total area of a light emission surface of the light emitting device.
Dependencies are inferred from the claim text.