Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• an electrode layer;
• a first semiconductor layer of a first conductivity type including a crystal having a cleavage plane, the first semiconductor layer including a first thin film portion extending in a first direction perpendicular to a third direction from the electrode layer toward the first semiconductor layer, the first thin film portion having a first thickness, and a thick film portion arranged with the first thin film portion in a plane perpendicular to the third direction, the thick film portion having a second thickness thicker than the first thickness;
• a first elongated electrode extending in the first direction in contact with the first thin film portion;
• a second semiconductor layer of a second conductivity type provided between the electrode layer and the first semiconductor layer and electrically connected to the electrode layer;
• and
• a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the crystal being a wurtzite-type crystal, at least one selected from an angle between the third direction and a (10-10) plane of the wurtzite-type crystal and an angle between the third direction and a (11-20) plane of the wurtzite-type crystal being not less than 88 degrees and not more than 92 degrees, and an angle between the first direction and a [0001] direction of the wurtzite-type crystal when projected onto the plane perpendicular to the third direction being not less than 3 degrees and not more than 87 degrees.