US 9,178,110 B2 · Light-emitting device and method for manufacturing same

Abstract

The present invention relates to a light-emitting device that is capable of preventing an increase in forward voltage while improving optical output characteristics, and to a method for manufacturing same. The light-emitting device comprises: a first conductive semiconductor layer; an active layer which is in contact with the first conductive semiconductor layer; a second conductive semiconductor layer which is in contact with the active layer and which has a patterned groove on a surface opposite the surface that is in contact with the active layer; a current-blocking layer which is formed on a bottom of the groove; a transparent conductive layer which is formed along a surface opposite the surface of the second conductive semiconductor layer that is in contact with the active layer, a sidewall of the groove, and the current-blocking layer; a reflective layer which is formed on a surface opposite the surface of the transparent conductive layer that is in contact with the second conductive semiconductor layer; a support substrate which is formed on a surface opposite the surface of the reflective layer that is in contact with the transparent conductive layer; and an electrode that is patterned on a surface opposite the surface of the first conductive semiconductor layer that is in contact with the active layer.

Claims16

Dependent claims

A light-emitting device, comprising:

a first conductive semiconductor layer;
an active layer which is in contact with the first conductive semiconductor layer;
a second conductive semiconductor layer which is in contact with the active layer, and which has a patterned groove on one surface thereof opposite to another surface thereof that is in contact with the active layer;
a current-blocking layer which is formed only on a bottom surface of the groove excluding a sidewall of the groove;
a transparent conductive layer which is formed along one surface of the second conductive semiconductor layer opposite to another surface thereof that is in contact with the active layer, a sidewall of the groove, and the current-blocking layer;
a reflective layer which is formed on one surface of the transparent conductive layer opposite to another surface thereof that is in contact with the second conductive semiconductor layer;
a support substrate which is formed on one surface of the reflective layer opposite to another surface thereof that is in contact with the transparent conductive layer;
and
an electrode that is patterned on one surface of the first conductive semiconductor layer opposite to another surface thereof that is in contact with the active layer.

6 more elements

A method for manufacturing a light-emitting device, the method comprising:

a substrate preparing step of preparing a substrate where a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer have been sequentially formed;
a current-blocking layer forming step of forming a patterned groove on an exposed surface of the second conductive semiconductor layer, and forming a current-blocking layer only on a bottom surface of the groove excluding a sidewall of the groove;
a transparent conductive layer forming step of forming a transparent conductive layer along one surface of the second conductive semiconductor layer opposite to another surface thereof that is in contact with the active layer, a sidewall of the groove, and the current-blocking layer;
a reflective layer forming step of forming a reflective layer on one surface of the transparent conductive layer opposite to another surface thereof that is in contact with the second conductive semiconductor layer;
a support substrate forming and substrate removing step of forming a support substrate on one surface of the reflective layer opposite to another surface thereof that is in contact with the transparent conductive layer, and then of removing a substrate;
and
an electrode forming step of forming a patterned electrode on one surface of the first conductive semiconductor layer opposite to another surface thereof that is in contact with the active layer.

4 more elements

Dependencies are inferred from the claim text.

Light-emitting device and method for manufacturing same

Life of this patent

Light-emitting device and method for manufacturing same

Life of this patent

Abstract

Claims16