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US 9,178,098 B2Granted
Solar cell with delta doping layer
AssigneeThe Boeing Company
InventorsXing-Quan Liu, Christopher M. Fetzer, Daniel C. Law
Life of this patent
Estimating the term…
Abstract
A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.
Claims8
A solar cell comprising:
- a base region including an active junction, said base region comprising a first side and a second side opposed from said first side;
- an intrinsic region directly contacting said first side of said base region;
- an emitter region located on said first side of said base region and directly contacting said intrinsic region such that said intrinsic region is located between said base region and said emitter region;
- a delta doping layer directly contacting said second side of said base region, said delta doping layer comprising a dopant selected from the group consisting of carbon, silicon, germanium, tin, lead and combinations thereof, wherein said delta doping layer comprises an average layer thickness ranging from about 5 nanometers to about 15 nanometers, wherein said delta doping layer comprises said dopant at a concentration of at least 1×1019 atoms per cm3;
- and
- a back surface field layer comprising AlGaAs or AGaInP, said back surface field layer directly contacting a surface of said delta doping layer opposite said base region such that said delta doping layer is disposed directly contacting and between said base region and said back surface field layer.
3 more elements
A solar cell comprising:
- a base region including an active junction, said base region comprising a first side and a second side opposed from said first side;
- an intrinsic region directly contacting said first side of said base region;
- an emitter region located on said first side of said base region and directly contacting said intrinsic region such that said intrinsic region is located between said base region and said emitter region;
- a first back surface field layer located on said second side of said base region, said first back surface field layer comprising AlGaAs or AlGaInP;
- a second back surface field layer located on said second side of siade base region, said second back surface field layer comprising AlGaAs or AlGaInP;
- and
- a delta doping layer positioned between and directly contacting said first back surface field layer and said second back surface field layer, said delta doping layer comprising a dopant selected from the group consisting of carbon, silicon, germanium, tin, lead, and combinations thereof, wherein said delta doping layer comprises and average layer thickness ranging from 5 nanometers to about 15 nanometers, wherein said delta doping layer comprises said dopant at a concentration of at least 1×1019 atoms per cm3.
4 more elements
Dependencies are inferred from the claim text.