Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
AssigneeSoitec
InventorsChantal Arena, Heather McFelea
Life of this patent
Estimating the term…
Abstract
Methods of fabricating photovoltaic devices include forming a plurality of subcells in a vertically stacked arrangement on a semiconductor material, each of the subcells being formed at a different temperature than an adjacent subcell such that the adjacent subcells have differing effective band-gaps. The methods of fabricating also include inverting the structure, attaching another substrate to a second semiconductor material, and removing the substrate. For example, each of the subcells may comprise a III-nitride material, and each subsequent subcell may include an indium content different than the adjacent subcell. Novel structures may be formed using such methods.
Claims6
A method of forming a photovoltaic device, comprising:
- forming a semiconductor structure or device, comprising:
- depositing at least one layer of semiconductor material over a base substrate;
- forming a subcell comprising one or more absorbance structures, wherein forming each of the one or more absorbance structures comprises:
- disposing a plurality of quantum dots comprising indium gallium nitride to overlie at least a portion of the at least one layer of semiconductor material;
- and
- depositing a barrier material comprising indium gallium nitride at a first temperature, the barrier material overlying and at least partially surrounding at least a portion of the plurality of quantum dots;
- and
- after forming the subcell, forming at least another subcell over the subcell, the at least another subcell comprising one or more absorbance structures, wherein forming each of the one or more absorbance structures comprises:
- disposing a plurality of quantum dots comprising indium gallium nitride to overlie at least a portion of the barrier material;
- and
- depositing another barrier material comprising indium gallium nitride at a second temperature, the second temperature being less than the first temperature used to deposit the barrier material such that the at least another subcell has a substantially higher indium content than an underlying subcell, the another barrier material overlying and at least partially surrounding at least a portion of the plurality of quantum dots;
- inverting the semiconductor structure or device;
- bonding a carrier substrate to the semiconductor structure or device, wherein the carrier substrate is bonded to a surface of the semiconductor structure or device proximate to the another subcell;
- and
- removing the base substrate.
Dependencies are inferred from the claim text.