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US 9,178,086 B2Granted
Method for fabricating back-contact type solar cell
AssigneeAu Optronics Corporation
InventorsYen-Cheng Hu, Jen-Chieh Chen, Zhen-Cheng Wu
Life of this patent
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Abstract
A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes.
Claims32
A method for fabricating a back-contact type solar cell, the method consisting essentially of following steps:
- (a) providing a semiconductor substrate;
- (b) roughening a light-receiving surface of the semiconductor substrate;
- (c) forming a plurality of phosphorus-containing pastes on a back surface of the semiconductor substrate;
- (d) performing a phosphorus diffusion process on the semiconductor substrate, wherein the phosphorus-containing pastes enter the semiconductor substrate to form a plurality of n-type heavily doped zones in the a back surface of the semiconductor substrate, and the phosphorus of the phosphorus diffusion process are diffused into the light-receiving surface of the semiconductor substrate to form a front surface field layer in the light receiving surface of the semiconductor substrate and to form a n-type lightly doped layer in the back surface and a plurality of side surfaces of the semiconductor substrate;
- (e) removing the n-type lightly doped layer;
- (f) forming a front anti-reflection layer on the front surface field layer, and a back anti-reflection layer on the back surface;
- (g) printing a plurality of lead-containing silver pastes on the back anti-reflection layer, wherein the lead-containing silver pastes are disposed corresponding to the n-type heavily doped zones, respectively;
- (h) printing a plurality of lead-containing aluminum pastes on the back anti-reflection layer, wherein the lead-containing aluminum pastes are disposed corresponding to a plurality of p-typed contacting regions of the back-contact type solar cell;
- and
- (i) sintering the lead-containing silver pastes and the lead-containing aluminum pastes for forming a plurality of electrodes.
7 more elements
A method for fabricating a back-contact type solar cell, the method consisting essentially of following steps:
- (a) providing a semiconductor substrate;
- (b) roughening a light receiving surface of the semiconductor substrate;
- (c) performing a phosphorus diffusion process on the semiconductor substrate, wherein the phosphorus of the phosphorus diffusion process are diffused into the semiconductor substrate to form a front surface field layer in the light receiving surface of the semiconductor substrate and a n-type doped layer in the back surface and a plurality of side surfaces of the semiconductor substrate;
- (d) removing the n-type doped layer;
- (e) forming a plurality of n-type doped zones in a back surface of the semiconductor substrate;
- (f) forming a plurality of p-type doped zones in the back surface of the semiconductor substrate, wherein the n-type doped zones are spaced from the p-type doped zones;
- (g) forming a front anti-reflection layer on the front surface field layer, and a back anti-reflection layer on the back surface;
- (h) printing a plurality of conductive pastes on the back anti-reflection layer, wherein the conductive pastes are disposed corresponding to the n-type doped zones and the p-type doped zones, respectively;
- and
- (i) sintering the conductive pastes for forming a plurality of electrodes.
7 more elements
A method for fabricating a back-contact type solar cell, the method consisting essentially of following steps:
- (a) providing a semiconductor substrate;
- (b) roughening a light receiving surface of the semiconductor substrate;
- (c) forming a mask layer on the light receiving surface;
- (d) performing a boron ions diffusion process on the semiconductor substrate to form a p-type doped layer in the back surface and a plurality of side surfaces of the semiconductor substrate;
- (e) removing the mask layer;
- (f) patterning the p-type doped layer to form a plurality of grooves and a plurality of p-type doped zones in the back surface, wherein the grooves and the p-type doped zones are alternately arranged;
- (g) forming a front surface field layer on the light receiving surface, and a plurality of n-type doped zones in the grooves, wherein the n-type doped zones are spaced from the p-type doped zones;
- (h) forming a front anti-reflection layer on the front surface field layer, and a back anti-reflection layer on the back surface;
- (i) printing a plurality of conductive pastes on the back anti-reflection layer, wherein the conductive pastes are disposed corresponding to the n-type doped zones and the p-type doped zones, respectively;
- and
- (j) sintering the conductive pastes for forming a plurality of electrodes.
8 more elements
A method for fabricating a back-contact type solar cell, the method consisting essentially of following steps:
- (a) providing a semiconductor substrate;
- (b) roughening a light receiving surface of the semiconductor substrate;
- (c) forming a front surface field layer in the light-receiving surface;
- (d) forming a plurality of n-type doped zones in the back surface of the semiconductor substrate;
- (e) forming a mask layer on the front surface field layer and covering the n-type doped zones;
- (f) performing a boron ion doping process on the semiconductor substrate to form a plurality of p-type doped zones in the semiconductor substrate where the mask layer uncovers;
- (g) annealing the semiconductor substrate;
- (h) removing the mask layer;
- (i) forming a front anti-reflection layer on the front surface field layer, and a back anti-reflection layer on the back surface;
- (j) printing a plurality of conductive pastes on the back anti-reflection layer, wherein the conductive pastes are disposed corresponding to the n-type doped zones and the p-type doped zones, respectively;
- (k) sintering the conductive pastes for forming a plurality of electrodes;
- and
- (l) forming a plurality of grooves on the back surface for isolating the n-type doped zones from the p-type doped zones.
10 more elements
Dependencies are inferred from the claim text.