Waveguide photodetector and forming method thereof
OwnerBing Liinventor
Life of this patent
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Abstract
Techniques are described for forming a waveguide photodetector. In one example, a method of forming a waveguide photodetector includes forming a waveguide on a substrate, e.g., silicon on insulator, depositing a first oxide coating over the waveguide and on the SOI substrate, creating a seed window through the first oxide coating to a bulk silicon layer of the SOI substrate, depositing a photodetector material into the seed window and on top of the first oxide coating over the waveguide, depositing a second oxide coating over the photodetector material and over the first oxide coating deposited over the waveguide and on the SOI substrate, and applying thermal energy to liquefy the photodetector material.
Claims13
A waveguide photodetector comprising:
- a first channel waveguide extending a first length along a substrate;
- a second channel waveguide extending a second length along the substrate,
- wherein the second channel waveguide has a first portion, a second portion, a top region, a first side region, and a second side region, and
- wherein the first channel waveguide and the second channel waveguide are physically separated from one another by a gap;
- a waveguide film disposed over a portion of the first channel waveguide, the first portion of the second channel waveguide, and the gap;
- a photodetector material disposed over the top region, the first side region, and the second side region of the second portion of the second channel waveguide, wherein the photodetector material forms a ridge encapsulating the second channel waveguide;
- and
- a dielectric film disposed between the second portion of the second channel waveguide and the photodetector material;
- the second silicon channel waveguide completely isolated from the other silicon material of the SOI substrate.
A waveguide photodetector comprising:
- a first channel waveguide extending a first length along a substrate;
- a second channel waveguide extending a second length along the substrate,
- wherein the second channel waveguide has a first portion, a second portion, a top region, a first side region, and a second side region, and
- wherein the first channel waveguide and the second channel waveguide are physically separated from one another by a gap;
- a waveguide film disposed over a portion of the first channel waveguide, the first portion of second channel waveguide, and the gap;
- a photodetector material that is disposed over the top region but is not adjacent the first side region or the second side region of the second portion of the second channel waveguide, wherein the photodetector material forms a slab loaded over the second channel waveguide;
- and
- a dielectric film disposed between the second portion of the second channel waveguide and the photodetector material;
- the second silicon channel waveguide completely isolated from the other silicon material of the SOI substrate.
Dependencies are inferred from the claim text.