Solid-state image pickup apparatus and image pickup system
AssigneeCanon Kabushiki Kaisha
InventorsNobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Takeshi Ichikawa
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Abstract
An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
Claims20
A solid-state image pickup apparatus in which a first semiconductor substrate comprising silicon and a second semiconductor substrate comprising silicon are placed upon each other, the first semiconductor substrate being where a photoelectric conversion element and a gate electrode of a transfer transistor for transferring an electric charge from the photoelectric conversion element are disposed, the second semiconductor substrate being where a peripheral circuit portion for reading out a signal based on the electric charge generated at the photoelectric conversion element is disposed,
- wherein the second semiconductor substrate is provided with a layer of silicide, and
- wherein the first semiconductor substrate is not provided with a layer of silicide.
A solid-state image pickup apparatus comprising:
- a first semiconductor substrate;
- and
- a second semiconductor substrate,
- wherein the first semiconductor substrate comprises silicon,
- the first semiconductor substrate is provided with a photoelectric conversion element, a gate electrode of a transfer transistor for transferring an electric charge from the photoelectric conversion element, a floating diffusion region where the electric charge is transferred from the photoelectric conversion element by the gate electrode of the transfer transistor, an amplification transistor including a gate electrode to which a signal based on an electrical potential of the floating diffusion region is input, and a reset transistor for setting the gate electrode of the amplification transistor to a reset electrical potential, and
- the first semiconductor substrate is not provided with a layer of silicide,
- wherein the second semiconductor substrate comprises silicon,
- the second semiconductor substrate is provided with a peripheral circuit portion for reading out a signal based on the electric charge generated at the photoelectric conversion element, and
- the second semiconductor substrate is provided with a layer of silicide, and
- wherein the solid-state image pickup apparatus comprises a diffusion prevention film for preventing a diffusion of silicide disposed between the first semiconductor substrate and the second semiconductor substrate.
Dependencies are inferred from the claim text.