Semiconductor constructions
AssigneeMicron Technology, Inc.
InventorsNeal L. Davis, David A. Kewley
Life of this patent
Estimating the term…
Abstract
Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends through the stack and along a first direction. The panel divides the stack into a first section on a first side of the panel and a second section on a second side of the panel. Memory cell stacks are between the channel material panel and the control gate material. The memory cell stacks include cell dielectric material shaped as containers having open ends pointing toward the channel material panel, and include charge-storage material within the containers. Some embodiments include methods of forming semiconductor constructions.
Claims21
A semiconductor construction, comprising:
- a stack comprising alternating levels of control gate material and intervening dielectric material;
- a rectangular channel material panel extending through the stack and along a first direction;
- the rectangular channel material panel dividing the stack into a first section on a first side of the rectangular channel material panel and a second section on a second side of the rectangular channel material panel, the rectangular channel material panel having a thickness between the first and second sides and having channel material throughout the thickness;
- the second side being in opposing relation to the first side;
- memory cell stacks between the rectangular channel material panel and the control gate material on both sides of the rectangular channel material panel;
- the memory cell stacks comprising cell dielectric material shaped as containers having open ends that open toward the rectangular channel material panel, and comprising charge-storage material within the containers;
- and
- a plurality of rectangular electrically insulative panels extending through the rectangular channel material panel and the stack, and sub-dividing the rectangular channel material panel into a plurality of segments;
- the rectangular channel material panel extending along a first direction, and the rectangular electrically insulative panels extending along a second direction substantially orthogonal to the first direction.
A semiconductor construction, comprising:
- a stack comprising alternating control gate material and intervening dielectric material;
- first rectangular dielectric material panels extending through the stack;
- the first rectangular dielectric material panels dividing the stack into a plurality of slices;
- the slices extending along a first direction;
- rectangular channel material panels extending along the first direction;
- individual rectangular channel material panels extending approximately along a center of each slice, the rectangular channel material panel having opposing sidewalls and having a thickness between the opposing sidewalls with channel material throughout the thickness;
- a plurality of second rectangular dielectric material panels extending through the stack and along a second direction substantially orthogonal to the first direction;
- the second rectangular dielectric material panels being in a many-to-one correspondence with each slice, extending through the rectangular channel material panels, and extending only partially across the slices;
- and
- memory cell stacks between the rectangular channel material panels and the control gate material;
- the memory cell stacks comprising cell dielectric material shaped as containers having open ends that open toward the rectangular channel material panels, and comprising charge-storage material within the containers.
Dependencies are inferred from the claim text.