Thin-film transistor
AssigneeIdemitsu Kosan Co., Ltd.
InventorsYuki Tsuruma, Kazuaki Ebata, Shigekazu Tomai, Shigeo Matsuzaki
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Abstract
A thin film transistor (1) includes a source electrode (50), a drain electrode (60), a gate electrode (20), a gate insulating film (30), and a channel layer (40) that is formed of an oxide semiconductor, the channel layer (40) having an average carrier concentration of 1×1016/cm3 to 5×1019/cm3, and including a high carrier concentration region (42) that is situated on the side of the gate insulating film (30) and has a carrier concentration higher than the average carrier concentration, and the channel layer (40) having a substantially homogenous composition.
Claims10
A thin film transistor comprising a source electrode, a drain electrode, a gate electrode, a gate insulating film, and a channel layer that is formed of an oxide semiconductor comprising a bixbyite-type crystal structure,
- the channel layer having an average carrier concentration of 1×1016/cm3 to 5×1019/cm3, and comprising a high carrier concentration region that is situated on a side of the gate insulating film and has a carrier concentration higher than the average carrier concentration, and
- the channel layer having a substantially homogeneous composition,
- wherein a field-effect mobility of the thin film transistor is 40 cm2/Vs or more.
Dependencies are inferred from the claim text.