Thin-film semiconductor device and method for manufacturing the same

A method for manufacturing a thin-film semiconductor device, the method comprising:

• preparing a substrate;
• forming a gate electrode above the substrate;
• forming a gate insulating film to cover the gate electrode;
• forming a semiconductor layer above the gate insulating film, the semiconductor layer having a channel region;
• forming a protective layer above the semiconductor layer by applying an organic material including silicon, oxygen, and carbon;
• forming, by baking the protective layer, an interfacial layer, in contact with the protective layer, between the semiconductor layer and the protective layer, the interfacial layer including carbon as a major component, the carbon originating from the organic material;
• and
• forming a source electrode and a drain electrode which are electrically connected to the semiconductor layer,
• wherein the interface layer includes sulfur.

A method for manufacturing a thin-film semiconductor device, the method comprising:

• preparing a substrate;
• forming a gate electrode above the substrate;
• forming a gate insulating film to cover the gate electrode;
• forming a crystalline silicon thin film above the gate insulating film, the crystalline silicon thin film having a channel region;
• foaming a protective layer above the channel region by applying an organic material including carbon;
• and
• forming a source electrode and a drain electrode above the crystalline silicon thin film,
• wherein an organic material contained in the protective layer is removed with hydrogen plasma treatment, and
• the method further comprises, between the forming of a crystalline silicon thin film and the forming of a protective layer, performing of a hydrogenation process on the crystalline silicon thin film with hydrogen plasma.