US 9,178,073 B2 · Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

Abstract

This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Claims3

Dependent claims

An oxide, comprising

Zn, Sn, and In,
wherein
a content of Zn, Sn, and In in the oxide is defined in atomic % as [Zn], [Sn], and [In], respectively;
the content satisfies expressions (1) to (3):
[In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1),
[In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2),
[In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3);
[In]/([In]+[Zn]+[Sn]) is 0.1 or higher;
[Sn]/([In]+[Zn]+[Sn]) is 0.16 or higher;
and
the oxide has a density of 5.8 g/cm3 or higher.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/989,944Filed 28 Nov 2011

Priority

JP 2010-26432426 Nov 2010

Published

US 2013/0248855 A126 Sep 2013

Granted

3 Nov 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification26 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
C01G 19/006
Compounds of tin: compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
C04B 35/01
Shaped ceramic products characterised by their composition ; Ceramics compositions ; Processing powders of inorganic compounds preparatory to…
C04B 35/453
Based on oxide ceramics: based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates

Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

Life of this patent

Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

Life of this patent

Abstract

Claims3