Thin film transistor and display device
AssigneeJoled Inc.
InventorsNarihiro Morosawa, Takashige Fujimori
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Abstract
Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.
Claims18
A thin film transistor comprising:
- a gate insulating film between an oxide semiconductor layer and a gate electrode, said gate electrode being between said gate insulating film and a substrate;
- a source/drain electrode in physical contact with a source/drain region of the oxide semiconductor layer and said gate insulating film, said source/drain region being between said gate insulating film and said source/drain electrode;
- a channel protective film between said source/drain electrode and a different source/drain electrode, a channel region of the oxide semiconductor layer being between said gate insulating film and said channel protective film,
- wherein said channel protective film comprises a second protective film between a first protective film and a third protective film, said second protective film being in physical contact with said first protective film and said third protective film,
- wherein said first protective film is in physical contact with said oxide semiconductor layer, said second protective film being in physical contact with said gate insulating film,
- wherein along every direction within a plan view of a layout, a boundary of the source/drain electrode extends beyond a boundary of the source/drain region.
Dependencies are inferred from the claim text.