Semiconductor device

A semiconductor device, comprising:

• a gate stack over a substrate;
• gate spacers over the substrate, the gate spacers adjoining sidewalls of the gate stack, each gate spacer of the gate spacers having an outer sidewall;
• offset spacers over the substrate, each offset spacer of the offset spacers adjoining the outer sidewall of a corresponding gate spacer;
• a first dislocation in the substrate under the gate stack, the gate spacers, and the offset spacers;
• and
• a second dislocation in the substrate under the gate stack, the gate spacers, and the offset spacers, wherein the second dislocation is substantially parallel to the first dislocation.

A semiconductor device, comprising:

• a semiconductor substrate;
• a gate structure over a channel region of the semiconductor substrate;
• a first dislocation in the semiconductor substrate having a first depth measured from an upper surface of the semiconductor substrate;
• and
• a second dislocation in the semiconductor substrate having a second depth measured from the upper surface of the semiconductor substrate, wherein the second dislocation is parallel to the first dislocation, and the second depth is the same as the first depth.