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US 9,178,059 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsHiroshi Takeda, Kiyoshi Takeuchi, Takashi Onizawa, Masayasu Tanaka
Life of this patent
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Abstract
A first contact, a second impurity region, and a second low-concentration impurity region form a Schottky barrier diode. The second impurity region has the same impurity concentration as those of first impurity regions, and thus can be formed in the same process as forming the first impurity regions. In addition, the second low-concentration impurity region has the same impurity concentration as those of first low-concentration impurity regions, and thus can be formed in the same process as forming the first low-concentration impurity regions.
Claims20
A semiconductor device comprising:
- a substrate;
- a first impurity region of a first conductivity type, formed in the substrate, which serves as a source and a drain of a transistor;
- a first low-concentration impurity region of a first conductivity type, formed in the substrate, which serves as an LDD region of the transistor;
- a second impurity region of a first conductivity type, formed in the substrate, which has the same impurity concentration as that of the first impurity region;
- a second low-concentration impurity region of a first conductivity type, formed in the substrate, which is connected to the second impurity region and has the same impurity concentration as that of the first low-concentration impurity region;
- a first contact which is connected to the second impurity region;
- and
- a second contact which is connected to the second low-concentration impurity region,
- wherein an element isolation film is not formed between the first contact and the second contact when seen in a plan view.
6 more elements
A semiconductor device comprising:
- a substrate;
- a gate electrode which is formed over the substrate;
- a source region, formed in the substrate, which is a first conductivity type impurity region;
- a drain region, formed in the substrate, which is the first conductivity type impurity region;
- a low-concentration impurity region of the first conductivity type, formed in the substrate, which is located between the gate electrode and the drain region when seen in a plan view and has a lower carrier concentration than that of the drain region;
- a first contact which is connected to the low-concentration impurity region, and is electrically connected to the source region;
- and
- a first junction region of a first conductivity type, formed in a portion connected to the first contact in the low-concentration impurity region, which has a higher carrier concentration than that of the low-concentration impurity region and has a lower carrier concentration than that of the drain region.
5 more elements
A semiconductor device comprising:
- a substrate;
- a gate electrode which is formed over the substrate;
- a source region, formed in the substrate, which is a first conductivity type impurity region;
- a drain region, formed in the substrate, which is the first conductivity type impurity region;
- a low-concentration impurity region of the first conductivity type, formed in the substrate, which is located between the gate electrode and the drain region when seen in a plan view and has a lower carrier concentration than that of the drain region;
- a first contact which is connected to the low-concentration impurity region, and is electrically connected to the source region;
- and
- a first junction region which is formed by introducing an impurity into a portion connected to the first contact in the substrate,
- wherein when a impurity concentration of the first junction region is set to Nd, a depth of the first junction region is set to σd, the impurity concentration of the low-concentration impurity region is set to NLDD, and the depth of the low-concentration impurity region is set to σLDD, the following Expression (1) is satisfied:
- Nd>NLDD·σLDD2/σd2 (1).
7 more elements
A semiconductor device comprising:
- a nitride semiconductor layer;
- a gate electrode which is formed over the nitride semiconductor layer;
- a source region which is formed in the nitride semiconductor layer;
- a drain region which is formed in the nitride semiconductor layer;
- a junction region, formed in the nitride semiconductor layer, which is located between the gate electrode and the drain region when seen in a plan view, and into which an impurity is introduced;
- and
- a first contact which is located over the junction region, and is electrically connected to the source region.
4 more elements
Dependencies are inferred from the claim text.