Semiconductor device
AssigneeSanken Electric Co., Ltd.
InventorsYuki Tanaka, Toru Yoshie, Mikio Kandori, Yusuke Ozawa
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Abstract
A semiconductor device includes a semiconductor substrate, a surface of which is provided with: a source region having a first conductivity type is formed in a body region having a second conductivity type opposite to the first conductivity type; a main electrode connected to the source region and the body region; and a gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied, and the semiconductor device includes: a recess formed in the surface of the semiconductor substrate, wherein the source region is exposed on an inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess.
Claims6
A semiconductor device comprising:
- a semiconductor substrate, a surface of the semiconductor substrate provided with:
- a source region having a first conductivity type formed in a body region, the body region having a second conductivity type opposite to the first conductivity type;
- a main electrode connected to the source region and the body region;
- and
- a gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied;
- and
- a recess formed in the surface of the semiconductor substrate,
- wherein the source region is exposed on an inner surface of the recess, and
- wherein the body region and the source region are sequentially formed on the inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess.
Dependencies are inferred from the claim text.